Technology Development Engineering Intern, Power GaN (Summer 2027)
GlobalFoundriesJob Title
Technology Development Engineering Intern, Power GaN (Summer 2027)
Role Summary
Intern on the Technology Development team supporting process and test development for Power GaN and related RF semiconductor technologies on 200mm manufacturing. Work focuses on integrating advanced process modules, supporting qualification milestones, executing experiments, and analyzing device and process performance.
Experience Level
Entry-level internship. Intended for undergraduate students (junior or graduating senior); prior related internship experience is a plus.
Responsibilities
Primary responsibilities focus on process and test development, cross-team coordination, and experimental work to qualify technology for manufacturing.
- Collaborate with technology integration, process, test, and device engineers to drive integration of advanced process modules.
- Develop differentiated offerings in 130nm, 90nm, and sub-90nm nodes for CMOS, SiGe, and GaN targeting RF applications.
- Lead interactions with testing, failure analysis, unit process, reliability, manufacturing, and research teams to support program goals.
- Support qualification milestones from concept through manufacturing installation.
- Design and execute experiments; analyze experimental and performance data for manufacturing capability and defect-level assessments.
- Perform work in accordance with Environmental, Health, Safety & Security policies.
Requirements
Must-have technical knowledge and skills for successful contribution during the internship.
- Basic knowledge of modern semiconductor device physics and device characterization.
- Basic knowledge of semiconductor processing.
- Fluent English — written and verbal communication.
- Ability to support experimental design, data analysis, and summarize inline measurements.
- Willingness to follow EHS procedures and work safely.
Preferred:
- Prior related internship or co-op experience.
- Project management skills and ability to navigate ambiguity.
- Strong written and verbal communication, planning, and organizational skills.
- Educational experience in device physics (FET, BJT, LDMOS, HEMT), electrical test and analysis methods, and wafer-level electrical testing and characterization.
- Experience with semiconductor processing in CMOS, SiGe, and/or GaN for RF applications.
Education Requirements
Minimum: Current junior or graduating senior undergraduate student in Electrical Engineering, Solid State Physics, Microelectronics, or another relevant engineering or physical science discipline. Preferred: current Master's or PhD students in a semiconductor discipline were noted as desirable.
About the Company
Company: GlobalFoundries
Headquarters: Saratoga Springs, New York, USA
GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.
