Staff Memory Design Engineer

Job Title

Staff Memory Design Engineer

Role Summary

Design and optimize DRAM memory arrays, peripheral logic, and analog circuits for next-generation memory products. Work on schematic and layout, verification, and integration with CAD/EDA and software teams to enable production sign-off.

Use AI-driven tools, automation, and semicustom methodology to accelerate design-space exploration, simulation turnaround, and silicon learning loops.

Experience Level

Senior - typically 4–8 years of experience in memory design (as stated in the posting).

Responsibilities

Key responsibilities include:

• Design, layout oversight, and optimization of DRAM memory arrays, peripheral logic, and analog circuits.
• Leverage AI-based tools and automation to accelerate schematic optimization and design-space exploration.
• Perform parasitic analysis, sensitivity studies, and corner coverage.
• Improve debug efficiency across simulation and silicon learning loops.
• Define and apply semicustom methodology for memory design and SoC/ASIC integration.
• Collaborate with CAD, EDA, and software teams to integrate AI-driven flows into simulation, verification, and sign-off environments.
• Oversee layout activities including floor-planning, placement, and routing.
• Perform circuit-level verification: functional, timing, power, and reliability analysis using industry-standard and Micron-specific tools.
• Communicate across groups to support standardization and drive design methodology improvements for future memory generations.

Requirements

Must-have technical skills and experience:

• Strong fundamentals in CMOS circuit design, device physics, and memory operation.
• Experience with SPICE-based simulation and parasitic extraction.
• Practical experience in circuit-level verification (functional, timing, power, reliability).
• Experience working with layout teams on floor-planning, placement, and routing.

Preferred / nice-to-have:

• Domain knowledge in DRAM (e.g., DDR5, LPDDR5, HBM) or other memory technologies.
• Experience or strong interest in AI/ML-assisted design flows, agentic AI, or automation for circuit design and verification.
• Domain knowledge in NAND memory design.
• Experience with SoC / ASIC semicustom flows.
• Strong communication and cross-functional collaboration skills.

Education Requirements

Master's degree in Electrical Engineering or Computer Engineering is specified in the posting. (The posting states a Master’s degree with 4–8 years of memory-design experience.)

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.