Silicon Carbide (SiC) MOSFET Characterization Engineer

Job Title

Silicon Carbide (SiC) MOSFET Characterization Engineer

Role Summary

Responsible for electrical characterization, performance evaluation, qualification, and production release of SiC power MOSFET products. Works within the product/device engineering team to develop test plans, execute lab and application-relevant tests, analyze results, and communicate conclusions to cross-functional stakeholders.

Experience Level

Mid-level. Typically requires 5+ years of experience in power semiconductor characterization, product engineering, device engineering, or applications engineering.

Responsibilities

Execute characterization programs from engineering samples through qualification and production release; document results and support production test correlation.

• Develop and execute comprehensive SiC MOSFET characterization plans.
• Perform DC, AC and thermal characterization including ruggedness (UIS/avalanche), SOA, short-circuit capability, Qrr, trr, and peak reverse-recovery current.
• Conduct dynamic switching tests (double-pulse, Eon/Eoff, switching times, dv/dt, di/dt, and ringing) under application-relevant conditions.
• Evaluate performance versus temperature, bus voltage, drain current, gate-drive voltage, external gate resistance, and switching conditions.
• Investigate abnormal electrical behavior and correlate findings with device, wafer process, assembly/package, and test variables.
• Develop good-vs-bad characterization methods and identify electrical signatures for production screening where applicable.
• Support bench-to-ATE correlation, datasheet limit development, product specifications, guard bands, and production test limits.
• Prepare characterization reports and clearly communicate technical conclusions to cross-functional teams.

Requirements

Must-have technical skills and experience for immediate contribution.

• Typically 5+ years experience in power semiconductor characterization, product/device engineering, or applications engineering.
• Direct experience with SiC MOSFETs; experience with 650 V to 1700 V+ power devices is highly desirable.
• Strong understanding of SiC MOSFET device physics, switching behavior, gate oxide behavior, capacitances, body-diode recovery, avalanche, SOA, and temperature dependence.
• Hands-on experience with power-device analyzers (e.g. Keysight B1505A/B1506A/PID1500), curve tracers, double-pulse systems, oscilloscopes, high-voltage probes, current probes, and LCR/impedance analyzers.
• Knowledge of high-voltage measurement techniques, fixture creepage and clearance design, Kelvin connections, grounding, parasitic inductance, fixture design, and measurement correlation.
• Experience analyzing characterization data using Python, JMP, Spotfire, MATLAB, or equivalent tools.
• Test-hardware skills: developing and debugging test boards and associated circuitry.

Preferred / Nice-to-have:

• Automotive-grade SiC MOSFET development and AEC-Q101 qualification experience.
• New product introduction experience from engineering characterization through qualification and high-volume manufacturing.
• Wafer-level and final-test correlation, production ATE screening, and manufacturing data analysis.
• SiC reliability testing experience (HTRB, HTGB, TDDB, threshold-voltage stability, high-temperature operation).

Education Requirements

BS or MS in Electrical Engineering, Electronic Engineering, Semiconductor Engineering, Physics, or a related discipline.

About the Company

Company: Vishay Siliconix

Headquarters: Kaohsiung, Taiwan

Vishay Siliconix is the Vishay subsidiary in Taiwan specializing in power MOSFETs, semiconductor packaging and related R&D and manufacturing. Founded in 1974, it produces discrete semiconductors and supports automotive, industrial, computing, telecommunications and other markets as part of the global Vishay group.