Senior Memory Design Engineer, HBM

Job Title

Senior Memory Design Engineer, HBM

Role Summary

The Senior Design Engineer designs, simulates, and optimizes DRAM circuits and supports development of digital and analog circuitry for high-bandwidth memory (HBM) products. The role collaborates with verification, product engineering, test, process integration, layout, and marketing to deliver manufacturable, cost-optimized memory solutions and drive future memory generation innovation.

Experience Level

Senior-level. Preferred 3–5 years of DRAM design, product, or system experience as stated in the posting.

Responsibilities

Key responsibilities include:

• Design digital, analog, and memory-core circuits from concept to implementation using CMOS logic and transistors.
• Use AI-enabled tools to assist schematic editing, data collection, and layout floorplanning.
• Create optimized floorplans for placement, routing, power delivery, sense margins, array timing, and die size; provide layout leadership.
• Perform circuit simulations and analysis with FINESIM, HSPICE, and Verilog; evaluate power, performance, reliability, and parasitic impacts.
• Validate designs via reticle experiments, tape-outs, and simulation-to-silicon correlation; identify and implement schematic edits.
• Prepare and maintain design documentation, contribute to best-known practices, and provide departmental training.
• Collaborate with global teams (build, verification, product engineering, test, probe, process integration, assembly, marketing) to ensure manufacturability and quality.
• Manage layout resources, track project tasks, lead design reviews, and prepare project status reports.

Requirements

Must-have skills and experience:

• Proven experience designing digital, analog, and memory circuits for DRAM or similar memory products.
• Proficiency with Cadence Virtuoso.
• Experience simulating with FINESIM, HSPICE, and Verilog.
• Strong analytical and problem-solving skills with demonstrated technical contributions and innovation.
• Expertise in DRAM subsystem architecture, specification, operation, or design, including cross-department technical leadership.
• Ability to lead cross-functional collaboration to optimize manufacturability, cost, reliability, and time-to-market.

Nice-to-have:

• Deep knowledge of industry-specific technologies and competitive trends.
• Excellent communication and interpersonal skills; self-motivated.

Education Requirements

Preferred BS or MS in Electrical Engineering or a related field. Relevant coursework cited: CMOS circuit design, VLSI, and analog circuit design. The posting indicates a preference for approximately 3–5 years of DRAM design, product, or system experience.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.