Skip to main content
GlobalFoundries logo

RF Technology Development Epitaxy and Integration Engineer – Principal Engineer

GlobalFoundries
October 13, 2026
Full-time
On-site
Essex Junction, Vermont, United States
$85,000 - $146,000 USD yearly
Process Engineering Jobs, Level - Senior

Job Title

RF Technology Development Epitaxy and Integration Engineer – Principal Engineer

Role Summary

Join GlobalFoundries' RF Technology Development team in Essex Junction, VT to develop and integrate epitaxial processes for RF semiconductor technologies. The role focuses on process development, integration, and qualification of FEOL devices to meet performance, cost, and yield targets.

Experience Level

Senior level (Principal). Preferred candidates have several years of semiconductor process or epitaxy engineering experience; exact years not mandated in the posting.

Responsibilities

Primary responsibilities include development, integration, and technical leadership for epitaxial and FEOL process work.

  • Develop, evaluate, and qualify CVD Si/SiGe epitaxial processes.
  • Define epitaxial growth conditions and establish controls to meet performance and manufacturability criteria.
  • Develop, optimize, and qualify FEOL semiconductor devices and processes for performance, cost, and yield.
  • Drive integration optimization using DOE, statistical analysis, and yield-learning techniques.
  • Partner with unit process, failure analysis, and characterization teams to improve device performance and yield.
  • Lead technical process problem-solving and respond to internal and external technical queries.
  • Establish design rules, test structures, and test methodologies for new technologies.
  • Support environmental, health, safety, and security requirements in daily work.

Requirements

Concise list of must-have skills and preferred qualifications.

  • Must-have: Practical familiarity with epitaxial growth techniques and hands-on experience with silicon or III-V epitaxy.
  • Must-have: English fluency (written and verbal).
  • Preferred: ~2+ years' experience in Silicon or SiGe BiCMOS FEOL/BEOL or III-V processing and semiconductor process development.
  • Preferred: ~2+ years relevant epitaxial growth engineering experience.
  • Preferred: Knowledge of device physics and RF fundamentals (e.g., S-parameters).
  • Preferred: Prior internship or co-op experience, demonstrated leadership, project management, and strong communication and organizational skills.

Education Requirements

Required: Graduating with a Master’s or PhD in Electrical Engineering, Materials Science, or another relevant engineering or physical science discipline from an accredited program. Minimum overall GPA of 3.0. (No alternative "equivalent experience" exception stated.)


About the Company

Company: GlobalFoundries

Headquarters: Saratoga Springs, New York, USA

GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.

GlobalFoundries logo

Date Posted: 2026-10-12