Process Integration Engineer - Advanced DRAM R&D

Job Title

Process Integration Engineer - Advanced DRAM R&D

Role Summary

Lead technology integration activities to enable manufacturability of next-generation Advanced DRAM within a 300mm R&D facility. The role focuses on resolving integration and circuit issues, improving device performance, yield, and reliability while supporting Micron's technology roadmap.

Work within the Technology Development organization and collaborate with multi-functional teams including yield improvement, product engineering, and fabrication teams to translate R&D experiments into manufacturable process flows.

Experience Level

Mid-level. No explicit years of experience specified; role expects demonstrated technical leadership on multi-disciplinary projects.

Responsibilities

Primary responsibilities include planning and executing integration work, data-driven yield improvement, and communicating technical progress.

• Lead technology integration for device components such as charge storage elements and thin-film transistors (TFTs).
• Collaborate with cross-functional teams (building, yield, product engineering) to resolve margin and manufacturability issues.
• Design, build, and execute experiments in the R&D fab to optimize process flows.
• Analyze inline, defect, and probe data to improve yield, performance, and reliability and to reduce cost.
• Develop and drive implementation of technical solutions to meet product requirements.
• Prepare and present technical summaries and project status to senior leadership and stakeholders.

Requirements

Summarized must-have skills and relevant competencies. Educational degrees are listed separately under Education Requirements.

Must-have:

• Strong background in semiconductor device physics and process integration.
• Proficiency in data analysis, Design of Experiments (DOE), and statistical techniques.
• Detailed knowledge of mainstream memory technologies such as DRAM or NAND.
• Demonstrated ability to lead technical projects and solve complex multi-disciplinary problems.

Nice-to-have:

• Experience with 3D DRAM technology or alternative memory architectures.
• Proven track record in a Technology Development or R&D fab environment.
• Familiarity with circuit and architecture issues related to memory scaling.

Education Requirements

Minimum: Bachelor’s degree in Engineering, Physics, or a related technical field. Preferred: Master’s degree or PhD in Engineering or a related technical field. (No certifications or equivalent-experience language specified.)

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.