Principal Memory Design Engineer, HBM

Job Title

Principal Memory Design Engineer, HBM

Role Summary

Lead design and delivery of high-performance DRAM circuit compositions for HBM products, covering digital, analog, and memory-core subsystems. Drive architecture, circuit design, layout planning, verification, and silicon validation to meet performance, power, reliability, and manufacturability targets.

Collaborate across design, layout, verification, test, and technology teams to produce scalable, manufacturable memory solutions.

Experience Level

Senior (Principal). The role expects significant senior-level technical leadership; no explicit years-of-experience requirement stated.

Responsibilities

Technical leadership and hands-on work across circuit design, verification, and silicon validation.

• Design and optimize DRAM circuits across digital, analog, and memory core subsystems for power, performance, and reliability.
• Develop and refine floorplans, routing strategies, power delivery networks, sense margins, timing, and die-size tradeoffs.
• Perform circuit simulations (FINESIM, HSPICE, Verilog) to analyze speed, power, noise, and reliability.
• Model parasitics and verify power and signal integrity; support validation, reticle experiments, and tape-out revisions.
• Drive simulation-to-silicon correlation and recommend schematic and layout improvements.
• Lead technical reviews, create documentation, and standardize best practices across design and layout teams.
• Coordinate and manage layout and build resources, resolve critical-path issues, and communicate project status and risks.

Requirements

Must-have technical skills, tools, and demonstrated abilities.

• Hands-on expertise with Cadence Virtuoso, physical layout, and circuit floorplanning.
• Experience using FINESIM, HSPICE, and Verilog for complex circuit simulation and analysis.
• Strong ability to model parasitics and verify power and signal integrity.
• Proven track record of simulation-to-silicon correlation and supporting tape-outs and validation.
• Demonstrated problem-solving on ambitious technical problems with measurable design or innovation impact.
• Deep knowledge of DRAM subsystem architecture and operation; experience leading multi-functional technical efforts.
• Effective technical communication, documentation, and ability to lead technical reviews and cross-functional teams.

Education Requirements

Minimum: BS in Electrical Engineering or a related field, or equivalent practical experience. Preferred: MS or PhD in Electrical Engineering or related field, or equivalent experience. The posting references advanced coursework in CMOS circuit building, VLSI, and analog circuits and allows equivalent practical experience in place of formal degrees.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.