Principal Medium Voltage Power MOSFET Design Engineer
Lead design and development of next-generation medium-voltage (MV) shielded-gate trench MOSFET technologies. Work with process integration, applications, marketing, and external foundry partners to convert TCAD-driven device concepts into manufacturable products and support transfer to mass production.
Senior β Principal level. Up to 15 years of experience in power semiconductor device or process development is preferred.
Primary duties focus on device design, simulation, data analysis, yield improvement, and production transfer.
Must-have technical skills and experience. Educational qualifications are listed separately.
Ph.D. preferred; M.S. in Electrical Engineering, Physics, or a related technical field acceptable. Related technical degrees or equivalent practical experience in power semiconductor device/process development are considered.
Company: Renesas
Headquarters: Hitachinaka, Japan
Renesas is a global leader in embedded semiconductor solutions, providing high-quality products across automotive, industrial, infrastructure, and IoT sectors. With over 22,000 employees in more than 30 countries, the company focuses on scalable solutions that enhance user experience and drive innovation while committed to sustainability and energy efficiency.
