Principal Engineer, Technology Development (2027 New College Graduate)

Job Title

Principal Engineer, Technology Development (2027 New College Graduate)

Role Summary

Entry-level engineering role embedded in the Technology Development team supporting 200mm manufacturing (FAB9) in Essex Junction, VT. The role focuses on semiconductor process and device development for CMOS, SiGe, and GaN technologies targeting RF applications.

The hire will join multidisciplinary project teams to develop process flows, support qualification milestones, run experiments, analyze results, and coordinate with manufacturing and test functions.

Experience Level

Entry-level / New college graduate (position is part of the New College Graduate program). Suitable for recent Ph.D. graduates or equivalent early-career candidates.

Responsibilities

Key responsibilities include development, integration, and qualification of semiconductor process modules and experiments.

• Collaborate with integration and device engineers to integrate advanced process modules meeting performance, reliability, yield, and cost targets.
• Design, execute, and analyze experiments; summarize inline measurements and defect assessments for manufacturing capability.
• Support technology development qualification from conception through manufacturing installation.
• Coordinate with test/characterization, failure analysis, unit process, reliability, manufacturing, and research teams to achieve program objectives.
• Perform work in accordance with Environmental, Health, Safety & Security requirements, including cleanroom product handling.

Requirements

Required technical skills and job expectations. Education degree requirements are listed separately under Education Requirements below.

Must-have

• Basic knowledge of modern semiconductor device physics and device characterization.
• Familiarity with semiconductor processing.
• Proficiency with MS Office and statistical analysis (including Cpk and Design of Experiments).
• Fluency in English, written and verbal.
• Ability to work in a manufacturing cleanroom and perform product handling as required.

Nice-to-have

• Prior internship or co-op experience in semiconductor or related fields.
• Project management, planning, and organizational skills.
• Experience with CMOS, SiGe, and/or GaN processing for RF applications.
• Educational or practical experience in device physics (FET, BJT, LDMOS, HEMT; bulk and SOI structures) and associated electrical test/analysis methods.
• Strong interpersonal, communication, and self-driven work habits.

Education Requirements

Ph.D. required in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Materials Science, or a related field from an accredited degree program. The role is targeted to new college graduates.

About the Company

Company: GlobalFoundries

Headquarters: Saratoga Springs, New York, USA

GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.