Principal Engineer, Technology Development
GlobalFoundriesJob Title
Principal Engineer, Technology Development
Role Summary
Lead technology development for RF GaN process and device integration at GF's 200mm Vermont fabrication (FAB9). Work on development, qualification, and transfer of process flows and device structures from concept through manufacturing installation.
Experience Level
Senior-level. Experience guidance provided by the posting: BS + 2–4 years, MS + 1–3 years, PhD + 0–1 year.
Responsibilities
Contribute to process and device development, experiment planning, and cross-functional program execution to meet performance, reliability, yield, and cost objectives.
- Develop integrated process flows and device structures for RF GaN technologies and demonstrate performance and reliability across qualification milestones.
- Plan, design, execute, and analyze experiments; summarize inline and lab measurements for performance, reliability, manufacturability, capability, and defectivity.
- Collaborate with testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD teams to achieve program goals.
- Support technology development through qualification and manufacturing installation.
- Follow and support Environmental, Health, Safety & Security requirements in all activities, including cleanroom work and product handling.
Requirements
Must-have technical skills and workplace requirements; preferred items listed separately.
- Knowledge of GaN HEMT device physics and device characterization (DC, s-parameter, load-pull, pulsed I-V).
- Hands-on experience in semiconductor processing, especially with wide bandgap / III-N material systems and GaN-on-Si processing.
- Experience with device characterization for GaN or other wide bandgap devices.
- Proficiency with MS Office and statistical analysis methods including Cpk and Design of Experiments (DOE).
- English fluency (written and verbal) and ability to work in a global, matrixed team with minimal supervision.
- Ability to work in a manufacturing cleanroom and perform product handling tasks.
Nice-to-have:
- Prior internship or co-op experience in semiconductor process or device development.
- Research experience in GaN e-mode/d-mode HEMT RF or power/high-voltage devices; familiarity with dispersion, traps, self-heating, and buffer design.
- Project management or leadership experience and strong written/verbal communication skills.
Education Requirements
Technical university degree required in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Materials Science, or a related technical field. Degree-to-experience guidance in the posting: BS + 2–4 years, MS + 1–3 years, PhD + 0–1 year. Minimum overall GPA requirement: 3.0. Exceptions may be approved by local HR.
About the Company
Company: GlobalFoundries
Headquarters: Saratoga Springs, New York, USA
GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.
