Power Development Intern (Jan–Jun 2027)
Internship within the technology development team focusing on semiconductor memory device development, with emphasis on Resistive RAM (RRAM). The intern will support device characterization, electrical testing, data analysis, and process/product improvement activities under engineer supervision.
Entry-level internship. Suitable for current university students seeking a credit-bearing 16–24 week industrial internship (January 2027 start).
Work under mentorship to execute device experiments, analyze results, and contribute to technology development and reliability activities.
Must-have availability and work conditions; desirable skills are listed as nice-to-have.
Nice-to-have:
Actively pursuing a Bachelor’s degree in Physics, Materials Science, Electrical & Electronics Engineering, Microelectronics, or a related technical field. Must be in good academic standing. Internship should be credit-bearing and align with a 16–24 week placement beginning January 2027.
Company: GlobalFoundries
Headquarters: Saratoga Springs, New York, USA
GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.
