Power Development Intern (Jan–Jun 2027)
Internship on the technology development team focused on semiconductor memory device development, with emphasis on Resistive RAM (RRAM). The role supports device characterization, electrical testing, data analysis, failure analysis, and evaluation of stack/process options to improve device performance and manufacturability.
Entry-level internship. Intended for current undergraduate students; requires full-time availability for the internship period.
Primary responsibilities focus on hands-on device testing, data analysis, and support of development activities for RRAM technology.
Must-have items to perform the internship and succeed in the team. Preferred skills are listed separately.
Nice-to-have
Actively pursuing a Bachelor's degree in Physics, Materials Science, Electrical & Electronics Engineering, Microelectronics, or a related field with a basic understanding of semiconductors and device physics; must be in good academic standing and eligible for a 16–24 week credit-bearing internship beginning January 2027.
Company: GlobalFoundries
Headquarters: Saratoga Springs, New York, USA
GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.
