Power Development Intern (Jan-Jun 2027)
Join the technology development team working on semiconductor memory device development, with emphasis on Resistive RAM (RRAM). The intern will support device characterization, test-method development, data analysis, and process/device correlation to improve performance and reliability.
This is a full-time, credit-bearing internship providing hands-on training, mentorship, and exposure to wafer fabrication and device characterization workflows.
Entry-level internship for students (undergraduate). Expected to be actively pursuing a Bachelor's degree and available for a 16β24 week placement starting January 2027; full-time (β40 hours/week).
Primary hands-on and analytical tasks the intern will perform:
Core expectations and desirable skills. Education details are listed separately under Education Requirements.
Actively pursuing a Bachelor's degree in Physics, Materials Science, Electrical & Electronics Engineering, Microelectronics, or a related field with a basic understanding of semiconductors and device physics. Internship must be credit-bearing and commence January 2027 for 16β24 weeks.
Company: GlobalFoundries
Headquarters: Saratoga Springs, New York, USA
GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.
