NAND Designer / Layout
Design and optimize circuits for next-generation NAND flash memory, focusing on base-die, memory arrays, analog blocks, logic controllers, and interface circuitry. The role works within a cross-functional memory design team in Tokyo to deliver high-performance, production-ready NAND products.
This is an engineering role centered on circuit design, simulation, performance trade-offs (timing, area, power), and collaboration with layout and verification teams.
Mid-level engineer. Candidates should have several years of practical experience designing analog and mixed-signal circuits for memory or related high-performance semiconductor products.
Key day-to-day responsibilities include:
Must-have technical skills and attributes:
Nice-to-have:
Preferred: Master's degree (MS) plus 5+ years' relevant experience, or Bachelor's degree (BS) plus 10+ years' relevant experience. Equivalent practical experience will be considered.
Reasonable accommodation: Individuals with disabilities may request reasonable accommodation for the application or interview process; contact hrsupport_japan@micron.com for assistance.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
