Memory Circuit Design Engineer
Responsible for design, layout, verification, and optimization of memory, logic, and analog circuits for Micron memory products. Works within a circuit design team and coordinates with process, test, and product engineering to deliver manufacturable memory solutions.
For application assistance or reasonable accommodations contact hrsupport_india@micron.com.
Mid-level β typically 3β4 years of relevant industry experience in memory circuit design (DDR5, LPDDR5/6, HBM3 or similar).
Key responsibilities include:
Must-have technical skills and experience:
Preferred:
Required: Bachelors degree in Electrical Engineering or Computer Engineering. Preferred: Masters degree in Electrical or Computer Engineering. The role expects approximately 34 years of experience in DDR5, LPDDR5/LPDDR6, HBM3 or other memory-related fields.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
