Memory Circuit Design Engineer
Design and deliver full-custom and compiler-based SRAMs, large signal arrays, ROMs, custom memories, digital circuits and caches for Intel CPUs and SoCs. Work with cross-functional domain experts to drive circuit innovation and produce high-performance, high-density, low-power embedded memory solutions on advanced CMOS nodes.
This is a fast-paced engineering role in the CPU circuit technology team focused on memory circuit design, characterization, and PPA optimization.
Senior-level. Minimum experience varies by degree: typically 8+ years (Bachelor's), 6+ years (Master's), or 4+ years (PhD); role expects substantial prior experience in memory and CMOS circuit design.
Key day-to-day responsibilities include:
Minimum technical requirements and core skills:
Requires one of: Bachelor's degree with 8+ years of relevant experience; Master's degree with 6+ years; or PhD with 4+ years in Electrical Engineering, Computer Engineering, Computer Science, or a related STEM field. Equivalent practical experience may be considered where stated.
Company: Intel Corporation
Headquarters: Santa Clara, California, USA
Intel Corporation is a leading multinational technology company known for its innovative semiconductor solutions, including microprocessors, artificial intelligence accelerators, and memory products. Headquartered in the United States, Intel focuses on cutting-edge technology and a collaborative working environment, driving advancements in semiconductor manufacturing to meet global demands. The company emphasizes professional development and aims to shape the future of technology through groundbreaking designs.
