Intern - HBM Design Architect (MS or PhD Student)

Job Title

Intern - HBM Design Architect (MS or PhD Student)

Role Summary

Work on HBM and DRAM architecture analysis within the Heterogeneous Integration Group (HBM Architecture team). Evaluate architecture concepts, develop analytical models and tools, and collaborate across architecture, design, verification, packaging, product, and system teams to inform technical tradeoffs and product decisions.

Opportunity to apply AI-assisted engineering methods and Large Language Models to support design exploration and engineering productivity.

Experience Level

Entry-level internship for graduate students (MS or PhD). Candidates must be enrolled in and returning to their degree program after the internship.

Responsibilities

Contribute to architecture evaluation, modeling, and data-driven analysis to compare design alternatives and support pathfinding.

• Analyze HBM and DRAM tradeoffs (timing, bandwidth, power, area, thermal, reliability, complexity) using analytical, simulation, and AI-assisted methods.
• Develop first-order models, simulations, and data-analysis tools to compare design alternatives and identify key sensitivities.
• Collaborate with circuit design, verification, layout, packaging, product, and system engineering teams to evaluate feasibility and technology tradeoffs.
• Review simulation, experimental, and silicon data to perform root-cause analysis, validate assumptions, and improve model accuracy.
• Apply Large Language Models, Generative AI, and AI-assisted engineering workflows to enhance analysis and document findings for cross-functional teams.

Requirements

Must-have technical skills and capabilities for the role.

• Strong foundation in at least two areas: CMOS circuits, digital or mixed-signal design, semiconductor devices, computer architecture, memory systems, thermal sciences, power delivery, signal integrity, or advanced packaging.
• Experience using engineering analysis, modeling, or simulation tools via graduate research, coursework, lab projects, or internships.
• Ability to define assumptions, perform technical analysis, evaluate results, and communicate evidence-based conclusions.
• Strong problem-solving, analytical, written communication, and verbal communication skills.

Nice-to-have:

• Experience with transistor-level simulation or schematic-entry tools (HSPICE, FineSim, Spectre) or similar platforms.
• Graduate research or project experience related to HBM, DRAM, SRAM, memory controllers, high-speed interfaces, or 3D/advanced packaging technologies.
• Familiarity with AI workloads and how memory bandwidth, latency, capacity, power, and thermal characteristics affect system performance.
• Experience using data analytics, Large Language Models, or AI-assisted engineering workflows to improve technical insight or productivity.

Education Requirements

Currently pursuing a Masters or Ph.D. degree in Electrical Engineering, Computer Engineering, or a related technical field (MS or PhD student) and must return to the degree program following completion of the internship.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.