Intern - DRAM Process Integration
Join the Process Integration team within Technology Development to support development of next-generation DRAM memory technologies. The intern will collaborate across process integration, device engineering, materials, and process architecture to help define and achieve technology targets.
This is a part-time R&D internship focused on laboratory and analytical work to support scaling, architecture evaluation, and documentation of process integration activities.
Entry-level / Internship. Role is intended for current graduate students; no specific years of professional experience required.
Contribute to process integration workstreams and documentation; collaborate with cross-functional technical teams.
Must-have technical skills and abilities for internship success.
Currently pursuing a Master of Science (M.S.) in Electrical Engineering, Microelectronics, or a related technical field with expected graduation Sept 2027 or later; preferred candidates may be pursuing or enrolled in a PhD in Electrical Engineering, Microelectronics, or a related technical field. Related technical fields and equivalent practical experience are acceptable as described by the posting.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
