Intern - DRAM Process Integration
The Process Integration Engineer Intern will support development of next-generation DRAM memory technologies within Micron's Technology Development organization. The role works across process integration, device engineering, materials development, and process architecture teams to advance device scaling and meet program targets.
Work is conducted in a collaborative R&D environment focused on technical execution, risk mitigation, and documentation of integration plans and characterization strategies.
Entry-level (Internship). Role is intended for current graduate students; enrollment and an expected graduation date are specified in the qualifications.
The intern will contribute to technical planning, cross-functional coordination, and evaluation of device/process options.
Must-have technical skills and abilities; preferred items are listed separately.
Nice-to-have:
Currently pursuing a Master of Science degree in Electrical Engineering, Microelectronics, or a related technical field with an expected graduation date of September 2027 or later. Preferred candidates may be enrolled in or pursuing a PhD in Electrical Engineering, Microelectronics, or a related technical field.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
