Intern - DRAM Design Engineer
The intern will support DRAM circuit design, analysis, verification, and optimization across digital, analog, and mixed-signal domains within Micron's DRAM Design organization. Work includes collaboration with design, verification, product engineering, test, process integration, assembly, and marketing teams to support new product development and manufacturability.
This is a hands-on engineering internship with opportunities to apply automation and AI-assisted methods to improve design workflows and productivity.
Entry-level internship. Candidates must be current Bachelor's or Master's students and remain enrolled through at least Fall 2027 (see Education Requirements).
Key day-to-day responsibilities for this internship:
Must-have and preferred qualifications.
Nice-to-have (preferred):
Currently pursuing a Bachelor's or Master's degree in Electrical Engineering or Computer Engineering. Candidates must continue academic studies through at least Fall 2027 and must not graduate before Fall 2027. Relevant coursework, academic projects, or research experience in digital design, analog design, semiconductor devices, VLSI, computer architecture, or related technical areas is expected.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
