Intern - Advanced DRAM Cell/Device Engineer

Job Title

Intern - Advanced DRAM Cell/Device Engineer

Role Summary

This internship is part of Micron's DRAM Technology Development team at the Boise R&D site. The role focuses on defining, developing, and optimizing DRAM cell and access device technologies through device physics, silicon experimentation, electrical characterization, and data-driven analysis.

The intern will work with cross-functional teams (modeling, design, process integration, manufacturing) to evaluate new architectures and support technology readiness and transfer to manufacturing.

Experience Level

Entry-level (Internship). Intended for graduate-level candidates (M.S. or Ph.D.) or early-career engineers; no specific years-of-experience requirement stated.

Responsibilities

Contribute to device experiments and analysis to improve DRAM cell performance, density, reliability, and manufacturability.

• Define electrical performance targets for access devices, capacitors, and cell stack elements and evaluate new device architectures and materials.
• Design and execute silicon experiments; perform electrical characterization and statistical analysis of experimental data.
• Analyze array-level behavior, including sensing margins, activation, disturb mechanisms, retention, and read/write interactions.
• Collaborate with modeling, design, process integration, and manufacturing to validate device behavior and support technology transfer.
• Use AI-assisted and generative AI tools where appropriate to improve data analysis and engineering workflows.

Requirements

Must-have technical skills and experience for successful performance in the internship.

• Demonstrated knowledge of semiconductor device physics (MOSFET operation, access devices, capacitor fundamentals).
• Experience with electrical characterization, device testing, and statistical analysis of large experimental datasets.
• Familiarity with DRAM operational concepts: activation, sensing, retention, and disturb mechanisms.
• Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar platforms; AI proficiency.

Nice-to-have:

• Experience in DRAM or NAND device development, characterization, or research.
• Hands-on experience with TCAD tools (e.g., Synopsys Sentaurus, Silvaco).
• Knowledge of semiconductor fabrication, BEOL integration, reliability mechanisms, and device variation analysis.
• Experience leading experimental programs or applying LLMs/AI-enabled analytics in engineering workflows.

Education Requirements

Minimum required: M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a related technical field.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.