Intern - Advanced DRAM Cell/Device Engineer

Job Title

Intern - Advanced DRAM Cell/Device Engineer

Role Summary

Join the DRAM Technology Development team at Micron's Boise R&D site to support development and optimization of advanced DRAM cell and access device technologies. The role involves hands-on silicon experimentation, electrical characterization, data analysis, and collaboration with modeling, design, process integration, and manufacturing teams.

Experience Level

Entry-level internship.

Responsibilities

The intern will contribute to experiments and analysis that improve DRAM cell performance, density, retention, reliability, and manufacturability.

• Define electrical performance targets for DRAM access devices, capacitors, and cell stack elements; evaluate new device architectures, materials, and integration approaches.
• Design and execute silicon experiments and test plans; perform electrical characterization and statistical analysis of experimental data.
• Analyze array-level behavior including sensing margins, activation characteristics, disturb mechanisms, retention performance, and read/write interactions.
• Collaborate with modeling, design, process integration, and manufacturing teams to validate device behavior and support technology transfer to manufacturing.
• Apply AI-assisted and generative AI tools, where appropriate, to improve data analysis and workflow efficiency.

Requirements

Key must-have technical skills and experience for the role. Preferred skills are listed separately.

• Demonstrated knowledge of semiconductor device physics, including MOSFET operation, access devices, and capacitor fundamentals.
• Experience with electrical characterization, device testing, and interpretation of large experimental data sets using statistical methods.
• Familiarity with DRAM operational concepts: activation, sensing, retention, and disturb mechanisms.
• Proficiency with data analysis and scripting tools such as Python, MATLAB, or JMP; practical AI proficiency for data workflows.

Nice-to-have

• Experience in DRAM or NAND device development, characterization, or research.
• Hands-on experience with TCAD tools (e.g., Synopsys Sentaurus, Silvaco).
• Knowledge of semiconductor fabrication processes, advanced BEOL integration, reliability mechanisms, and device variation analysis.
• Demonstrated ability to lead complex experimental programs and align multi-functional teams.
• Experience leveraging LLMs or AI-enabled analytics to improve research productivity and technical insights.

Education Requirements

M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a related technical field.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.