Engineer GaN Epi Development

Job Title

Engineer GaN Epi Development

Role Summary

This role supports GaN integration for power electronics within GlobalFoundries Technology & Innovation, embedded at GF Labs at IMEC in Leuven, Belgium on a 3-year local contract with a potential move to Burlington, VT (USA) thereafter.

The engineer will perform hands-on experiments and integration, lead joint development projects with IMEC, drive technology transfer to GF R&D teams, and engage with the GaN materials and tooling ecosystem.

Experience Level

Entry-level / New graduate (early career). Postdoctoral candidates are also encouraged to apply. Preferred: ~1 year of study or research experience in the GaN field.

Responsibilities

Primary responsibilities include development, integration and collaboration with IMEC and vendors, plus documentation and dissemination of results.

• Learn and transfer GaN epitaxy and integration steps (strain relief buffer layers, back-side barrier, selective S/D regrowth) from IMEC programs to GF R&D.
• Partner with IMEC’s GaN ecosystem to evaluate materials and integration schemes (CMP slurries, cleaning, passivation, co-integration approaches).
• Own and drive joint-development projects between GlobalFoundries and IMEC; organize and lead project activities.
• Build and maintain relationships with GaN material and tooling vendors.
• Contribute invention disclosures and support IP development.
• Contribute to scientific publications and conference presentations.
• Understand application domains for GaN (power electronics at 1200V, 650V, 100V and lower; high-frequency millimeter wave and RF).
• Provide technical feedback to shape IMEC program content and participate in partner technical reviews (approximately twice per year).
• Travel occasionally (approximately 1–2 times per year) to support GF R&D teams.
• Perform work following Environmental, Health, Safety & Security requirements; prepare reports and presentations; other duties as assigned.

Requirements

Concise list of required and preferred skills and experience. Education requirements are summarized separately below.

• Must-have: Fundamental knowledge of semiconductor power devices and high electron mobility devices (HEMTs); strong written and verbal English communication skills.
• Must-have: Ability to document results (reports, presentations) and work safely under standard EHS procedures.
• Must-have: Willingness to travel occasionally (travel expectation ~1–2x per year; up to 10% stated).
• Nice-to-have: Hands-on experience in GaN research, epitaxy (epi) and integration, process development and device testing.
• Nice-to-have: Project management skills, planning and organizational ability, experience interacting with industrial partners and vendors.

Education Requirements

PhD in physics, electrical engineering, microelectronics or a closely related field is required. Postdoctoral candidates are welcome. The posting prefers candidates with approximately one year of study or research experience in the GaN field. (No alternative degree equivalency was specified.)

About the Company

Company: GlobalFoundries

Headquarters: Saratoga Springs, New York, USA

GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.