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Engineer - DRAM Device & Cell Technology

Micron Technology
August 16, 2026
Full-time
On-site
Boise, Idaho, United States
Device Engineering Jobs, Level - Mid-Career

Job Title

Engineer - DRAM Device & Cell Technology

Role Summary

Join Micron's R&D DRAM Device and Cell Technology group to define and validate future DRAM device and cell technologies in a 300mm R&D facility. The role focuses on electrical characterization, failure analysis, modeling, and translating device-level insights into manufacturable improvements for next-generation DRAM.

Experience Level

Mid-level. Typical candidate has multiple years of relevant industry or research experience (commensurate with the position's technical expectations).

Responsibilities

Key responsibilities include defining device targets, designing experiments, modeling device behavior, and collaborating across teams to improve yield and performance.

  • Define electrical specifications and device-level targets for performance, reliability, and scaling for DRAM and emerging memory technologies.
  • Design, execute, and interpret experiments to optimize cell and access device performance, including materials experiments and new integration schemes.
  • Develop physical and electrical models (TCAD and compact models) to identify performance, yield, and reliability limiters.
  • Create and refine stress methodologies to evaluate device reliability (TDDB, leakage, variability, endurance) and establish design margins.
  • Analyze array-level behavior using probe, parametric, and backend data to root-cause variability and improve yield and cost.
  • Collaborate with process integration, design, and product engineering to translate device insights into product and process improvements.

Requirements

Must-have technical skills and experience; preferred items listed separately.

  • Strong expertise in semiconductor device physics (CMOS, diodes, related devices).
  • Deep knowledge of mainstream memory technologies, especially DRAM.
  • Experience with DRAM array characterization and failure analysis.
  • Experience designing experiments and developing characterization methodologies.
  • Experience with physical/electrical modeling (TCAD and compact modeling).
  • Proficiency in data analysis, design of experiments (DOE), statistical techniques and tools such as Python or JMP; familiarity with agentic AI workflows.
  • Ability to analyze probe, parametric, and backend data to diagnose variability and yield issues.

Nice-to-have:

  • Experience working across process integration and circuit/architecture domains.
  • Strong written and verbal communication and demonstrated cross-functional collaboration skills.
  • Proven problem-solving and the ability to present technical status to management.

Education Requirements

MS plus ~5+ years industry experience or a PhD with hands-on research in Electrical Engineering, Physics, or a related technical field (or equivalent practical/research experience).


About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.

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Date Posted: 2026-08-14