Engineer, DRAM — Advanced DRAM and EM Device/Cell Technology

Job Title

Engineer, DRAM — Advanced DRAM and EM Device/Cell Technology

Role Summary

Join the R&D DRAM Device and Cell Technology group to define and validate future DRAM device and cell technologies in a 300mm R&D facility. The role focuses on electrical characterization, failure analysis, modeling, and translating device insights into process and product improvements.

Experience Level

Mid-level — typically candidates have 5+ years post-MS industry experience or hold a PhD in a relevant field.

Responsibilities

The engineer will set electrical targets, design experiments, analyze device and array behavior, and work with cross-functional teams to improve DRAM technology.

• Define and drive electrical specifications for DRAM and emerging memory technologies, converting product requirements into device-level targets for performance, reliability, and scaling.
• Design, implement, and interpret experiments to optimize cell and access device performance, including materials experiments and new integration schemes.
• Develop physical and electrical models (TCAD and compact modeling) to identify performance, yield, and reliability limiters.
• Create or improve stress methodologies to evaluate device reliability (e.g., TDDB, leakage, variability, endurance) and establish design margins.
• Analyze array-level behavior using probe, parametric, and backend data to root-cause variability and improve yield and quality.
• Collaborate with process integration, design, and product engineering teams to translate device insights into technology and product improvements.

Requirements

Must-have technical skills and experience required to perform the role.

• Strong expertise in semiconductor device physics, including CMOS, diodes, and related devices.
• Deep knowledge of mainstream memory technologies such as DRAM; familiarity with NAND, NOR, or SRAM is valuable.
• Experience with DRAM array characterization and failure analysis.
• Proficiency in data analysis, design of experiments (DOE), and statistical techniques using tools such as JMP or Python.
• Experience developing or using device modeling tools (TCAD, compact modeling) and interpreting modeling results.
• Experience creating and applying stress/reliability test methodologies.
• Experience applying AI or data-driven techniques to engineering data analysis.
• Strong problem-solving skills and ability to communicate technical status to management (preferred strong written and verbal communication).

Education Requirements

MS in Electrical Engineering, Physics, or a related technical field with 5+ years of industry experience, or a PhD with hands-on research in Electrical Engineering, Physics, or related fields. No specific certifications were listed.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.