DRAM Device & Cell Technology Engineer
Design and develop DRAM cell and access-device technologies to improve density, retention, and reliability. Work within a multi-functional DRAM and Cell Technology team to define next-generation DRAM architectures and translate device-level innovations into manufacturable silicon.
Mid-level (no specific years of experience stated).
Core responsibilities include designing experiments, characterizing devices, and collaborating across teams to integrate and scale solutions.
Must-have technical skills and experience; preferred items listed separately.
M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a related field (specified as minimum qualifications in the source).
Micron mentions compensation and benefit programs and states equal opportunity employment. Specific benefits or salary details were not provided in the posting.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
