DRAM Design Engineer - TPG
Design and evaluate circuit test structures and small logic blocks to support future DRAM technology nodes. Work with process integration and modeling teams to benchmark performance, power, area, and cost targets and to influence standard cell architecture and design rules.
Primary tasks include inverter ring-oscillator simulations, test structure design, benchmarking metrics development, and improvements to DRAM sense amplifier design. Use automation and scripting for data analysis and decision support.
Entry-level. The role is appropriate for candidates with roughly 1 year of relevant experience in semiconductor device or circuit development.
The engineer will perform simulation, design, and analysis to define and validate technology and circuit choices for future DRAM nodes.
Must-have technical skills and experience relevant to DRAM circuit and test-structure design.
Employer indicates acceptance of a Master’s degree in Electrical Engineering or a related field along with approximately 1 year of experience in the job offered or a related occupation. No other degree or certification requirements are specified.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
