DRAM Design Engineer (Intern)
Intern-level design engineer supporting digital and analog circuit design for DRAM memory products. Work with global design and verification teams to develop, validate, and optimize circuits from schematic through layout to tape-out, ensuring manufacturability and product quality.
Entry-level internship. Role is intended for candidates in their final year of a Bachelor's or enrolled in a Master's program (see Education Requirements for details).
Key day-to-day duties include design, verification, and cross-functional collaboration to deliver manufacturable memory designs.
Must-have professional skills and attributes for successful performance in this internship.
Currently pursuing the final year of a Bachelor's degree or enrolled in a Master's degree in Electronics Engineering, Electrical Engineering, or a related technical field at an accredited university. (Enrollment requirement extracted from Minimum Qualifications.)
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
