DRAM Design Engineer (Intern)
Internship position on Micron's DRAM design team responsible for assisting with digital and analog circuit design, layout, simulation, and verification for memory products. The role collaborates with cross-functional engineering teams to ensure designs meet manufacturability, reliability, and performance targets.
Entry-level (Internship). Intended for final-year Bachelor's or Master's students; suitable for candidates seeking course-credit or work-term experience in semiconductor design.
Contribute to design and validation activities across memory product development.
Key qualifications and skills for successful performance in the internship.
Currently pursuing the final year of a Bachelor's degree or a Master's degree in Electronics Engineering, Electrical Engineering, or a related field at an accredited university.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
