Wide Bandgap Process Integration Engineer

Job Title

Wide Bandgap Process Integration Engineer

Role Summary

Lead development and scaling of Gallium Nitride (GaN) power device process technologies within TI's Advanced Technology Development team. Work across device design, process integration, characterization, reliability, and manufacturing to deliver manufacturable, high-performance GaN power devices for high-volume production.

Experience Level

Mid-level / specialized technical role. The posting requires doctoral-level education and demonstrated research experience in GaN or compound-semiconductor device/process development; no explicit years-of-experience range provided.

Responsibilities

Focus on process integration, device performance, reliability, and transfer to manufacturing:

• Perform GaN device simulations (TCAD), device design, and layout.
• Develop and optimize robust process flows and drive DOE execution.
• Identify and solve complex process integration challenges.
• Collaborate with fab and manufacturing engineers to ensure manufacturability and yield.
• Work with reliability engineers to meet device reliability requirements.
• Conduct electrical and materials characterization and statistical data analysis.
• Perform failure root-cause investigations to improve device, process, reliability, and yield.
• Scale processes toward high-volume manufacturing and support cross-functional handoff.

Requirements

Must-have and preferred technical skills (education summarized below):

• Must-have: Research experience in GaN or compound-semiconductor device/process development; strong understanding of III-nitride materials, device physics, and reliability mechanisms.
• Must-have: Knowledge of power FETs and HEMT process flows; hands-on lab experience and strong problem-solving skills.
• Must-have: Experience with electrical and materials characterization methodologies and statistical data analysis; excellent verbal and written communication skills.
• Nice-to-have: Familiarity with GaN-on-Si technology for power switching, experience with fab tools and process modules/integration, and understanding of packaging interactions.
• Nice-to-have: Demonstrated ability to take initiative, prioritize, and collaborate across functions.

Education Requirements

PhD (Doctorate) required in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or a related field. Posting specifies minimum cumulative GPA of 3.0/4.0. The posting emphasizes research experience in GaN or compound-semiconductor device and process development.

About the Company

Company: Texas Instruments

Headquarters: Dallas, Texas, USA

Texas Instruments is a global semiconductor company that designs, manufactures, and sells analog and embedded processing chips for various markets including industrial, automotive, and personal electronics. The company's innovations aim to make electronics more affordable and reliable, fostering advancements in technology through each generation of semiconductors.