Technology Development Intern, RF GaN (Summer 2027)
GlobalFoundriesJob Title
Technology Development Intern, RF GaN (Summer 2027)
Role Summary
Work with the Technology Development team at GF FAB9 in Essex Junction to develop RF GaN process flows and devices for 200mm manufacturing. Interns embed in project teams to support device, process integration, characterization, and qualification activities.
Experience Level
Entry-level internship for students; suitable for current Master's or Ph.D. candidates.
Responsibilities
Primary responsibilities include design, execution, and analysis of experiments and device characterization for GaN HEMT and related devices.
- Design and set up process modules, in-line measurement structures, and electrical tests for GaN HEMT devices.
- Run experiments, collect data, and analyze results to meet electrical performance, reliability, yield, and cost objectives.
- Collaborate with device, process integration, reliability, failure analysis, manufacturing, and simulation teams to support development and qualification milestones.
- Support DC/AC and RF testing and final device characterization for discrete devices (GaN HEMTs, capacitors, diodes, resistors).
- Perform work in accordance with Environmental, Health, Safety & Security requirements and maintain safe lab/fab practices.
Requirements
Must-have technical skills and expectations. Education requirements are summarized separately below.
- Basic knowledge of semiconductor device physics, device characterization, and processing with emphasis on III-N (wide bandgap) materials.
- Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and fabrication.
- Minimum overall GPA of 3.0 and in good academic standing.
- English proficiency (written and verbal) and ability to work at least 40 hours per week during the internship.
- Preferred: prior internship or co-op, research experience in GaN e-mode/d-mode HEMT or other WBG devices, familiarity with RF/power device testing and TCAD/modeling, semiconductor processing experience (GaN, CMOS, SiGe), and demonstrated leadership or project management skills.
Education Requirements
Actively pursuing a Master’s or Ph.D. in Electrical Engineering, Solid State Physics, or a related technical field in an accredited program during the internship period; must be in good academic standing (minimum 3.0 GPA).
About the Company
Company: GlobalFoundries
Headquarters: Saratoga Springs, New York, USA
GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.
