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TD Memory Quality and Reliability PhD Intern

Intel Corporation
November 2, 2026
Internship
Remote friendly (Folsom, California, United States)
United States
$120,898 - $120,902 USD yearly
Device Engineering Jobs, Level - Entry or Early Career

Job Title

TD Memory Quality and Reliability PhD Intern

Role Summary

Work with the Technology Development Memory Quality and Reliability team to characterize, analyze, and model SRAM, Register File (RF), and Fuse memory technologies for advanced Intel process nodes. The role supports technology certification and PDK release milestones through silicon characterization, data analysis, predictive modeling, and risk assessment.

Experience Level

Internship level for current PhD students (student / intern).

Responsibilities

Typical responsibilities include hands-on data analysis, memory characterization, model development, and cross-functional technical reporting.

  • Analyze silicon characterization data from SRAM, RF, and Fuse test structures to identify trends, variability, and risks.
  • Support memory characterization across voltage, temperature, and process corners.
  • Perform data analysis, visualization, and reporting using Python, JMP, or similar tools.
  • Develop and refine statistical models for Vmin/Vmax prediction and readiness assessments.
  • Contribute to Silicon-to-Simulation (Sil2Sim) correlation studies and methodology development.
  • Generate technical reports and present data-driven findings to engineering teams and stakeholders.
  • Collaborate with Design, Device Engineering, Process Integration, Product Development Engineering, and Yield teams.

Requirements

Required technical skills and experience for successful internship performance.

  • Basic knowledge of semiconductor devices, microelectronics, or integrated circuit design.
  • Programming or scripting experience (Python preferred) and familiarity with data analysis libraries.
  • Experience analyzing technical or research data via academic projects, research activities, or prior internships.
  • Familiarity with data visualization and statistical modeling techniques.
  • Ability to produce clear technical reports and communicate results to engineering teams.
  • Collaboration skills for working in cross-functional engineering environments.
  • Nice-to-have: experience with Pandas/NumPy, JMP, large-scale data analysis, predictive modeling, Sil2Sim correlation, memory architectures, silicon characterization, reliability assessment, or semiconductor test methodologies.

Education Requirements

Currently pursuing a Ph.D. in Electrical Engineering or a related field (e.g., microelectronics, integrated circuit design, semiconductor device physics, VLSI). Cumulative GPA of 3.0 or higher required. Coursework or research in SRAM/memory technologies, semiconductor device physics, statistics/machine learning, or semiconductor process technology is preferred.


About the Company

Company: Intel Corporation

Headquarters: Santa Clara, California, USA

Intel Corporation is a leading multinational technology company known for its innovative semiconductor solutions, including microprocessors, artificial intelligence accelerators, and memory products. Headquartered in the United States, Intel focuses on cutting-edge technology and a collaborative working environment, driving advancements in semiconductor manufacturing to meet global demands. The company emphasizes professional development and aims to shape the future of technology through groundbreaking designs.

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Date Posted: 2026-10-30