Staff Memory Design Engineer, HBM

Job Title

Staff Memory Design Engineer, HBM

Role Summary

Design and optimize digital, analog, and memory-core circuits for High Bandwidth Memory (HBM) products within Micron’s memory design organization. Collaborate with global design, verification, product engineering, test, probe, process integration, assembly, and marketing teams to deliver manufacturable, high-quality DRAM solutions.

Drive circuit-level innovation, lead layout and floorplanning decisions, and support tape-outs and silicon validation across product development cycles.

Experience Level

Senior — Staff-level engineering role. Preferred experience indicated approximately 6+ years in DRAM design, product, or system engineering.

Responsibilities

The role's core responsibilities include:

• Design digital, analog, and memory-core circuits from concept through implementation using CMOS logic and transistor-level design.
• Create and lead optimized floorplans for placement, routing, power delivery, sense margins, array timing, and die-size tradeoffs; provide layout leadership.
• Perform circuit simulations and analyses using FINESIM, HSPICE, and Verilog to evaluate power, performance, reliability, and parasitic effects.
• Validate designs through reticle experiments, tape‑out revisions, and simulation-to-silicon correlation; identify and implement schematic edits.
• Prepare and maintain design documentation, contribute to best practices, and provide departmental training.
• Coordinate globally with verification, product engineering, test, probe, process integration, assembly, and marketing to ensure manufacturability and quality.
• Manage layout resources, track project tasks, act as primary contact for design/layout/verification/test issues, and lead design reviews and status reporting.

Requirements

Must-have technical skills and experience:

• Proven experience designing and optimizing DRAM or memory-related circuits and subsystems.
• Proficiency with Cadence Virtuoso for schematic/layout work.
• Experience simulating circuits with FINESIM, HSPICE, and Verilog.
• Strong analytical and problem-solving skills with demonstrable technical contributions and innovation.
• Experience collaborating across multiple engineering and manufacturing organizations to optimize quality, cost, reliability, and time-to-market.

Nice-to-have:

• Experience leading cross-department technical efforts and mentoring team members.
• Deep knowledge of industry technologies, competitive trends, and DRAM subsystem architecture.
• Strong communication and interpersonal skills; self-motivated and proactive.

Education Requirements

Preferred: Bachelor's (BS) or Master's (MS) degree in Electrical Engineering or a related technical field. The posting also references preferred experience of approximately 6 years in DRAM design, product, or system engineering.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.