Staff Memory Design Engineer, HBM

Job Title

Staff Memory Design Engineer, HBM

Role Summary

Design, simulate, and optimize DRAM circuits and supporting digital/analog circuitry for advanced memory products. Work cross-functionally with design, verification, product engineering, test, process integration, assembly, and marketing to deliver manufacturable, high-quality, cost‑optimized solutions.

Experience Level

Senior - typically a candidate with significant industry experience (commonly 6+ years in DRAM or related memory design roles).

Responsibilities

Core responsibilities include circuit design, simulation, layout leadership, and cross-disciplinary coordination from concept through silicon.

• Design digital, analog, and memory-core circuits using CMOS logic and transistors, implementing device specifications from concept to tape‑out.
• Develop optimized floorplans for placement, routing, power delivery, sense margins, array timing, and die size; lead layout efforts.
• Perform circuit simulations and analyses using FINESIM, HSPICE, and Verilog to assess power, performance, reliability, and parasitics.
• Validate builds through reticle experiments and simulation‑to‑silicon correlation; drive schematic edits and tape‑out revisions.
• Use AI‑enabled tools to assist schematic editing, data collection, and layout floorplanning where applicable.
• Prepare and maintain design documentation, lead design reviews, and report project status and technical decisions.
• Collaborate with global teams (verification, product engineering, test, probe, process integration, assembly) to ensure manufacturability and quality.
• Manage layout resources, track project tasks, and act as point of contact for design, layout, verification, and test issues.

Requirements

Must-have technical skills and experience for the role.

• Proven experience designing DRAM or advanced memory circuits and contributing significant technical solutions.
• Proficiency with Cadence Virtuoso for schematic and layout work.
• Practical experience simulating circuits with FINESIM and HSPICE; Verilog for modeling and verification.
• Experience with circuit floorplanning, placement/routing tradeoffs, power delivery, and array timing considerations.
• Strong analytical and problem‑solving skills and a record of technical innovation.
• Expertise in DRAM subsystem architecture, operation, or design and demonstrated cross‑department technical leadership.
• Ability to collaborate proactively across multiple engineering organizations to optimize manufacturability, cost, reliability, and time‑to‑market.

Education Requirements

BS or MS in Electrical Engineering or a related field is stated as preferred; the posting also references coursework in CMOS circuit design, VLSI, and analog circuit design. Equivalent practical experience is acceptable. Preferred profile: BS/MS plus ~6 years of DRAM design, product, or system experience.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.