Staff Engineer, Process Development – Cell Film

Job Title

Staff Engineer, Process Development – Cell Film

Role Summary

Staff Engineer responsible for developing and scaling thin film (ALD/CVD) processes for cell films in advanced NAND memory manufacturing at Fab 10N/X, Singapore. Work includes process optimization, integration with device teams, tool engagement, failure analysis, and mentoring junior engineers.

The role focuses on delivering reliable, manufacturable thin film solutions that meet electrical, reliability, and yield targets across nodes and platforms.

Experience Level

Senior-level. The posting specifies approximately 3+ years of relevant thin film R&D experience; the position expects demonstrated technical leadership and independent problem-solving.

Responsibilities

Primary responsibilities include process development, integration, tool engagement, and technical leadership for cell film processes.

• Develop, optimize, and characterize thin film processes (ALD/CVD) to meet performance, reliability, and manufacturability targets.
• Design and execute experiments, analyze results, and translate findings into process improvements and scale-up plans.
• Own defined portions of a process module or sub-module; track process margins, sensitivities, and integration risks.
• Collaborate with integration and device teams to ensure process compatibility and target electrical performance.
• Correlate material, structural, and electrical data to guide optimization and support failure analysis and root-cause investigations.
• Develop hands-on knowledge of equipment and hardware; partner with equipment engineers and suppliers for tool qualifications, upgrades, and transfers.
• Communicate technical results via reports and reviews; participate in cross-functional project teams and escalate risks with data-driven recommendations.
• Mentor junior engineers and contribute to team knowledge sharing and technical growth in thin film materials and process physics.

Requirements

Key technical and professional requirements (must-have):

• 3+ years of experience in thin film R&D for microelectronic devices with a record of leading complex technology development.
• Demonstrated ability to influence technology direction, mentor teams, and deliver solutions for advanced memory nodes.
• Strong fundamentals in thin film deposition (ALD/CVD) and materials characterization techniques.
• Working knowledge of plasma processes, vacuum systems, and chemical reaction behavior relevant to deposition processes.
• Ability to link process conditions to material properties and device behavior; experience with failure analysis and root-cause investigations.
• Familiarity with electrical test methods and fab metrology tools used for process and device evaluation.
• Understanding of NAND cell structures and basic device physics.

Education Requirements

PhD or equivalent experience in Materials Science, Chemical Engineering, Physics, Chemistry, Electrical Engineering, or a related technical field (the posting explicitly allows equivalent practical experience in place of a degree).

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.