Staff Engineer, Advanced DRAM Process Integration
Work within Micron’s Technology Development organization in a 300mm R&D facility to develop and integrate processes for advanced memory technologies. The role focuses on device physics, materials science, and process integration to enable vertically stacked memory devices.
The position requires designing and executing experiments in the R&D fab, analyzing device and process data, and collaborating with cross-functional teams to improve performance, yield, and manufacturability.
Senior — requires industry experience. Minimum qualifications specify 3+ years of relevant semiconductor process integration or development experience.
Key responsibilities include leading technology development for stacked memory devices, executing experiments, and resolving performance and yield issues.
Must-have technical skills and experience, plus preferred qualifications.
MS or PhD in Physics, Materials Science, Electrical Engineering, or a related technical field (listed as minimum qualifications).
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
