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Sr Principal GaN Modeling Engineer

Qorvo
May 20, 2026
Full-time
On-site
Apopka, Florida, United States
Device Engineering Jobs, Level - Senior

Job Title

Sr Principal GaN Modeling Engineer

Role Summary

Lead development of compact and behavioral models for GaN HEMT devices used in high-frequency, high-power RF applications. Work with process, reliability and circuit teams to ensure models are accurate, predictive and suitable for design and production.

On-site role within the Modeling Team supporting RF and power product development in Apopka, FL.

Experience Level

Senior β€” requires 15+ years of relevant experience in semiconductor device characterization and modeling.

Responsibilities

Primary responsibilities include:

  • Define and execute on-wafer and packaged device characterization plans (DC, CV, S-parameters, noise, load-pull, pulsed I‑V).
  • Develop, extract and refine physics-based compact and behavioral models for GaN HEMTs.
  • Perform TCAD and circuit-level simulations and validate models against hardware measurements.
  • Support PDK development and provide model support to internal and external customers.
  • Analyze test data, identify device or measurement issues, and recommend corrective actions to improve performance and yield.
  • Prepare technical reports, documentation and application notes describing model usage and limitations.
  • Investigate novel modeling approaches and mentor junior engineers.

Requirements

Must-have qualifications and skills:

  • 15+ years experience in semiconductor device characterization and modeling, specifically RF GaN HEMTs.
  • Deep theoretical and practical understanding of GaN device physics and materials.
  • Proficiency with RF characterization equipment: network analyzers, spectrum analyzers, load-pull systems and probe stations.
  • Experience with RF simulation and modeling tools (e.g., Keysight ADS, Cadence AWR/Spectre, TCAD tools).
  • Strong programming and data-analysis skills (Python, MATLAB, C++ or similar) for automation and data interpretation.
  • Strong analytical, documentation and cross-functional collaboration skills.

Nice-to-have:

  • Experience with specific GaN compact models and extraction tools (MVSG, ASM-HEMT, Angelov).
  • Prior PDK development experience and experience supporting design teams.

Education Requirements

Master's or Ph.D. in Electrical Engineering, Applied Physics, or a related field with focus on semiconductor devices; equivalent advanced academic training may be acceptable.


About the Company

Company: Qorvo

Headquarters: Greensboro, NC, US

Qorvo supplies innovative semiconductor solutions that enhance connectivity and power for a variety of applications, including consumer electronics, automotive, and healthcare. With a focus on RF and power solutions, Qorvo combines technology leadership and global manufacturing to address complex challenges in fast-growing industries. Their commitment to excellence and innovation drives them to shape the future of wireless communications.

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Date Posted: 2026-05-19