SMTS Device Modeling & Characterization

Job Title

SMTS Device Modeling & Characterization

Role Summary

Join the Ultra-Low-Power CMOS modeling team in Bengaluru to develop compact (SPICE) device models for FDSOI, FinFET and Bulk MOSFET technologies used in GlobalFoundries Process Design Kits (PDKs). The role focuses on device characterization, compact-model extraction, model-to-hardware correlation and cross-functional collaboration to deliver customer-ready models.

Work includes measurement planning, model development, statistical and RF characterization, technical reporting, and mentoring or leading technical projects as needed.

Experience Level

Senior — the posting specifies PhD plus 8 or more years of experience, or Master’s plus 12 or more years of experience.

Responsibilities

Key responsibilities include:

• Design MOSFET characterization structures and plan measurements for compact-model extraction.
• Develop and implement compact SPICE models for FDSOI, FinFET, Bulk technologies, and emerging devices such as MRAM and RRAM.
• Perform model extraction and statistical modeling (Monte Carlo, mismatch, fixed corners); deliver model-to-hardware correlation and K/CpK analyses.
• Analyze device physics and measurement data; debug device and measurement issues in collaboration with device and modeling engineers.
• Prepare technical reports and recommendations summarizing results.
• Lead or participate in cross-functional and cross-site projects; coach and mentor junior team members.
• Support Environmental, Health, Safety & Security requirements and programs.

Requirements

Essential technical skills and experience (education requirements appear separately below):

• Must-have: Strong semiconductor device physics knowledge, particularly MOSFET behavior and characterization; hands-on experience with measurements and characterization techniques.
• Must-have: Experience with compact model development and extraction workflows; familiarity with SPICE-model families (for example BSIM) and model-to-hardware correlation.
• Must-have: Ability to analyze measurement data, debug device/measurement issues, and produce clear technical reports.
• Nice-to-have: Knowledge of FDSOI and FinFET technologies and RF/high-frequency MOSFET characterization.
• Nice-to-have: Experience with model extraction tools (e.g., MBP, ICCAP) and statistical modeling techniques.
• Nice-to-have: Experience with process development, and modeling of MRAM/RRAM devices.

Education Requirements

PhD in Electrical or Electronics Engineering (preferred) or Master’s in Electrical or Electronics Engineering with emphasis on semiconductor physics, microelectronics or device engineering. The posting specifies PhD +8 years of experience or Master’s +12 years of experience. Related technical education or equivalent practical experience in semiconductor/device engineering is relevant.

About the Company

Company: GlobalFoundries

Headquarters: Saratoga Springs, New York, USA

GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.