Senior Engineer, DRAM Device & Cell

Job Title

Senior Engineer, DRAM Device & Cell

Role Summary

As a Device Engineer in the R&D DRAM Device and Cell Technology Group, you will define and validate future DRAM device and cell technologies in a 300mm R&D facility. You will characterize memory arrays, analyze electrical behavior and failures, develop experiments and models, and collaborate with process integration, design, and product teams to improve yield, quality, and performance.

Experience Level

Senior — typical background: MS plus 5+ years of industry experience, or PhD with relevant research experience.

Responsibilities

Key responsibilities include device specification, experimentation, modeling, reliability evaluation, array analysis, and cross-functional translation of device insights into product improvements.

• Define electrical specifications translating product requirements into device-level targets for performance, reliability, and scaling.
• Design, implement, and interpret experiments to optimize cell and access device performance, including materials experiments and new integration schemes.
• Develop physical and electrical models (TCAD and compact) to identify performance, yield, and reliability limiters.
• Create or improve stress methodologies to evaluate device reliability (e.g., TDDB, leakage, variability, endurance) and establish design margins.
• Analyze array-level behavior using probe, parametric, and backend data to root-cause variability and improve yield and quality.
• Collaborate with process integration, design, and product engineering teams to translate device insights into technology and product improvements.

Requirements

Must-have technical skills and experience (education requirements are listed below).

• Expertise in semiconductor device physics, including CMOS, diodes, and related devices.
• Deep knowledge of mainstream memory technologies such as DRAM, NAND, NOR, or SRAM.
• Proficiency in data analysis, DOE, and statistical techniques using tools such as JMP or Python; familiarity with agentic tools.
• Experience characterizing devices, interpreting electrical data, and applying device-physics insight to manufacturing decisions.

Nice-to-have:

• Experience with DRAM array characterization and failure analysis.
• Experience working across process integration and circuit or architecture domains.
• Strong written and verbal communication skills and demonstrated cross-functional collaboration.

Education Requirements

MS (with 5+ years industry experience) or PhD in Electrical Engineering, Physics, Materials Science & Engineering, or a related technical field; equivalent practical experience is acceptable.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.