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RFIC GaN Power Amplifier Engineer

GlobalFoundries
September 25, 2026
Full-time
On-site
Essex Junction, Vermont, United States
$85,000 - $146,000 USD yearly
Device Engineering Jobs, Level - Entry or Early Career

Job Title

RFIC GaN Power Amplifier Engineer

Role Summary

Design and validate RF GaN power amplifiers and RFICs for wireless and defense applications. Collaborate with process engineering, modeling, and applications teams to optimize amplifier performance and support technology transfer and design enablement.

Contribute technical reports, invention disclosures, and scientific publications as required.

Experience Level

Entry-level - suitable for new graduates and early-career engineers with relevant research experience in RF or microwave power amplifiers.

Responsibilities

Primary duties include design, simulation, measurement, documentation, and cross-functional collaboration to develop GaN RF power amplifier solutions.

  • Design and simulate RF GaN power amplifiers for wireless and defense applications.
  • Perform electromagnetic (EM) modeling, circuit simulation, and RFIC layout.
  • Characterize and validate amplifier performance through bench testing and measurement.
  • Collaborate with process, modeling, and applications teams to optimize PA performance.
  • Support technology transfer and design enablement for GaN RF platforms.
  • Author invention disclosures and contribute to publications and conference presentations.
  • Write technical reports and prepare presentations.
  • Perform duties in a safe and compliant manner and support Environmental, Health, Safety & Security programs; other duties as assigned.

Requirements

Must-have qualifications are listed first, followed by preferred qualifications.

Must-have:

  • Research experience in RF/microwave power amplifier design, GaN device physics, or RFIC design.
  • Fundamental knowledge of RF power amplifier design and GaN HEMT device behavior.
  • Experience with EM simulation and RF EDA tools (examples: ANSYS HFSS, ADS, Cadence) and RF measurement equipment.
  • Willingness to travel up to 10% and fluency in English (written and verbal).

Nice-to-have:

  • Post-doctoral research experience.
  • Experience with GaN PA design for defense, 5G, or satellite communications.
  • Proficiency in Cadence Spectre, ADS, HFSS, or similar RF tools.
  • Familiarity with load-pull measurements and large-signal modeling.
  • Project management, strong written and verbal communication, and organizational skills.

Education Requirements

PhD in Electrical Engineering, Microelectronics, Physics, or a related field is required. Post-doctoral candidates are explicitly welcome.


About the Company

Company: GlobalFoundries

Headquarters: Saratoga Springs, New York, USA

GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.

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Date Posted: 2026-09-23