RF Technology Development Integration Engineer — Principal Engineer

Job Title

RF Technology Development Integration Engineer — Principal Engineer

Role Summary

Join the RF Technology Development organization in Malta, NY to develop, optimize and qualify FEOL and BEOL semiconductor devices and processes for RF applications. The role focuses on device design, electrical characterization, analysis, and driving technical process improvements to meet performance, cost, and yield targets.

Experience Level

Senior-level. Typical guidance: 2+ years of relevant industry experience in Silicon or SiGe BiCMOS FEOL/BEOL processing or semiconductor process development; PhD holders may qualify with 0–2 years of experience.

Responsibilities

Key responsibilities include:

• Develop, optimize, and qualify FEOL and BEOL semiconductor devices and processes to meet performance, cost, and yield requirements.
• Design and electrically characterize RF devices (FET, bipolar, diodes, passives); perform DC and RF measurements including s-parameters, noise figure, and loadpull.
• Conduct theoretical studies and simulations to optimize device performance and benchmark against state of the art.
• Design, execute, and analyze DOE experiments.
• Partner with process module engineers, failure analysis, and characterization teams to improve device performance and yield.
• Own and drive technical process problem solving; establish technology design rules, test structures, and test methodologies.
• Interact with internal and external stakeholders and respond to technical queries.
• Perform work safely and support Environmental, Health, Safety & Security programs.

Requirements

Must-have technical skills and attributes; preferred items listed at the end of the list.

• 2+ years experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and/or semiconductor process development (or equivalent relevant experience).
• Background in CMOS device physics, semiconductor processing, and device characterization.
• Experience with DC and RF characterization and analysis (s-parameters, noise figure, loadpull) and strong data analysis skills.
• Excellent oral and written communication and interpersonal skills; English fluency required.
• Demonstrated ability to lead technical problem solving and collaborate across cross-functional teams.
• Willingness to apply for and, if required, obtain a U.S. Department of Defense security clearance; consent to citizenship/background questions.
• Preferred: experience with high-frequency device design and characterization, Cadence or other layout/simulation tools, prior internship/co-op experience, leadership or project management experience, and strong planning and organizational skills.

Education Requirements

Master's or PhD in Electrical Engineering, Materials Science, or a related engineering or physical science discipline from an accredited program. Minimum overall GPA of 3.0 is required; the posting indicates PhD candidates may be considered with 0–2 years of experience.

About the Company

Company: GlobalFoundries

Headquarters: Saratoga Springs, New York, USA

GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.