RF Technology Development Device Engineer - MTS

Job Title

RF Technology Development Device Engineer - MTS

Role Summary

Join the RF Technology Development team to develop, simulate, characterize and optimize SiGe HBT and RF CMOS devices for production semiconductor processes. The role combines TCAD simulation, device design, electrical and RF characterization, and cross-functional work with process integration and test teams.

The position is based at the Essex Junction, VT site and involves technical problem solving, data analysis, and interaction with internal and external stakeholders.

Experience Level

Mid-level — typically requires 3+ years of hands-on experience in semiconductor device analysis and TCAD. Preferred candidates have 5+ years in device/process development or equivalent experience.

Responsibilities

Core responsibilities focus on TCAD, device design, and electrical/RF characterization to advance RF semiconductor technologies.

• Perform TCAD simulation and theoretical studies to optimize SiGe HBT and RF CMOS device performance and benchmark against state of the art.
• Design test structures, establish design rules and test methodologies for new technologies.
• Plan and execute DC and RF device characterization, including high-power measurements, S-parameter and load-pull testing.
• Collaborate with process integration and fabrication teams to support device fabrication and troubleshooting.
• Analyze measurement and simulation data to drive process/device improvements and resolve technical issues.
• Interact with internal and external customers and respond to technical queries.
• Follow Environmental, Health, Safety & Security procedures in all activities.

Requirements

Key technical and practical requirements for the role.

Must-have:

• 3+ years experience in semiconductor device analysis and TCAD, with hands-on work in Silicon CMOS or SiGe BiCMOS TCAD and device analysis.
• Experience in RF device design and characterization, including high-frequency measurements and analysis.
• Familiarity with Cadence or other layout and simulation tools.
• Strong data analysis skills and ability to interpret measurement and simulation results.
• Effective written and verbal English communication skills.
• Ability and willingness to relocate to Essex Junction, VT.

Nice-to-have:

• Experience leading device or process development projects.
• Experience with noise figure measurements and load-pull analysis.
• Demonstrated ability to work in a global matrixed organization with minimal supervision.
• Strong organizational skills and ability to manage shifting priorities and meet deadlines.

Education Requirements

Master's degree or PhD in Electrical Engineering, Materials Science, Physics, or a related engineering/physical science discipline is stated as preferred. Alternatives acceptable per posting: BS with ~6–7 years relevant experience, MS with ~5–6 years, or PhD with ~3–4 years. The posting implies equivalent practical experience may be considered.

Apply: GlobalFoundries application page

About the Company

Company: GlobalFoundries

Headquarters: Saratoga Springs, New York, USA

GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.