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Principal Signal Integrity Engineer - Pathfinding

Micron Technology
September 25, 2026
Full-time
On-site
Boise, Idaho, United States
$119,000 - $320,000 USD yearly
Device Engineering Jobs, Level - Senior

Job Title

Principal Signal Integrity Engineer - Pathfinding

Role Summary

Join Micron's Interface Pathfinding team to investigate and validate novel interconnect and signaling solutions for high-speed memory and die-to-die interfaces. The team performs forward-looking feasibility studies spanning modeling, measurement, and design-rule definition with a 3–5 year technology horizon.

Experience Level

Senior. The role expects an experienced engineer with 10+ years of industry experience in signal or power integrity applied to high-speed interface technologies.

Responsibilities

Lead technical SI analysis, modeling, and evaluation to support pathfinding studies and translate results into design guidance for partner teams.

  • Generate and validate interconnect models from field-solver extraction through time- and frequency-domain simulation.
  • Assess substrate and packaging technologies and translate physical characteristics into channel performance projections.
  • Drive channel and I/O co-optimization during feasibility studies; coordinate with circuit, packaging, and system teams.
  • Define progressive package- and system-level design rules based on EM analysis and simulation data.
  • Establish forward-looking link budgets and develop sim-to-silicon correlation methodologies.
  • Author analysis reports, modeling methodology documents, and design-rule specifications as authoritative references.
  • Engage cross-discipline stakeholders to convert SI findings into actionable guidance for product programs.

Requirements

Concise list of must-have technical qualifications and useful additional skills.

Must-have:

  • 10+ years industry experience in signal or power integrity analysis for high-speed interfaces.
  • Extensive application of electromagnetic and transmission-line theory to SI/PI of differential and single-ended interfaces.
  • Proficiency with time- and frequency-domain simulation tools (e.g., ADS, HSPICE, SPECTRE, or equivalent).
  • Deep experience with electromagnetic field solvers (e.g., Q3D, SIWAVE, HFSS) including setup, mesh strategy, and validation.
  • Working knowledge of hardware measurement tools (oscilloscopes, TDR, VNA) for SI characterization.
  • Ability to take broad technical ownership, collaborate across disciplines, and produce clear written analysis and design documents.

Preferred / Nice-to-have:

  • Familiarity with memory I/O architectures and their SI constraints.
  • Experience with advanced packaging (2.5D/3D, embedded die, high-density organic substrates) and related EM modeling.
  • Post-silicon characterization and sim-to-measurement correlation (TDR, insertion loss, eye diagrams, BER).
  • Some exposure to modeling optical links and to AI-based methods for modeling/simulation workflows.
  • Prior experience in pathfinding or advanced development environments focused on methodology development.

Education Requirements

MS or PhD in Electrical Engineering or a related field (MS accepted; PhD preferred). Strong electromagnetic and signal-integrity fundamentals and demonstrated hands-on modeling and simulation experience are required.


About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.

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Date Posted: 2026-09-22