Principal Memory Design Engineer, Pathfinding
Work on Micron's Pathfinding Design Team to define and develop mixed-signal circuits for next-generation memory technologies, spanning the memory array through the interface block. Focus areas include concept definition, circuit simulation, optimization, and floorplanning to enable DRAM and emerging memory solutions.
This role provides technical leadership on circuit implementation and cross-team coordination to ensure functionality, timing, and power robustness.
Senior level. The posting specifies 8+ years of relevant experience.
Key responsibilities include delivering circuit designs, simulations, and integration work that enable new memory architectures.
Must-have technical skills and experience, followed by preferred strengths.
Must-have:
Nice-to-have:
Bachelor's or Master's degree in Electrical Engineering, Computer Engineering, or a related field (listed under Minimum Qualifications).
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
