Principal HBM Design Architect

Job Title

Principal HBM Design Architect

Role Summary

Design and validate digital and analog DRAM circuits for high‑bandwidth memory (HBM) products, including block‑level and full‑chip analysis, timing and power optimization, and participation in architectural pathfinding for next‑generation HBM solutions.

This role is part of the HBM Architecture Team and collaborates with design, verification, product engineering, process, packaging, and build teams to deliver functionally accurate, low‑power, high‑performance HBM devices.

Experience Level

Senior – position requires substantial industry experience (see Education Requirements for detailed years-of-experience tied to degrees).

Responsibilities

The main responsibilities include design, simulation, analysis, and cross‑team collaboration to develop robust HBM circuits and architectures.

• Design, simulate, and optimize digital and analog DRAM circuits: data path, ECC, command/control, and high‑speed timing structures.
• Evaluate block‑level and full‑chip functionality and propose solutions to ensure correct circuit and system behavior.
• Perform timing, area, power, and complexity analysis for high‑speed DRAM and mixed‑signal circuits.
• Conduct pathfinding studies and feasibility analyses for future HBM architectures.
• Contribute to layout and optimization of memory, logic, and analog circuits.
• Analyze circuit behavior across PVT and parasitic conditions to ensure robust operation.
• Collaborate with verification, product engineering, process, packaging, and build teams.
• Support design reviews, documentation, and improvement of design methodologies.

Requirements

Must-have technical skills and tools; degree and years-of-experience are listed under Education Requirements below.

• Strong understanding of CMOS circuit design and device physics.
• Experience with schematic entry and circuit simulation tools (HSPICE, FineSim, or equivalent).
• Experience with power distribution and network analysis.
• Proficiency with scripting languages such as Python, Tcl, or Perl.
• Demonstrated ability to analyze timing, power, and signal integrity for high‑speed mixed‑signal designs.

Nice-to-have:

• Familiarity with DRAM or memory subsystem design and high‑speed interface circuits.
• Strong analytical and cross‑team communication skills.

Education Requirements

Bachelor of Science in Electrical Engineering (BSEE) with 7+ years of relevant circuit design experience, or Master of Science in Electrical Engineering (MSEE) with 5+ years of relevant circuit design experience. The posting specifies degree-plus-years combinations as minimum qualifications.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.