Principal Engineer / Senior Manager, Front End Central Product Integration (FE cPIE) - HBM

Job Title

Principal Engineer / Senior Manager, Front End Central Product Integration (FE cPIE) - HBM

Role Summary

Lead global front-end product integration for High Bandwidth Memory (HBM), driving yield improvement, product maturity, and new product introduction across Micron sites. Manage technical execution, project delivery, and collaborative relationships with teams in Japan, Taiwan, Singapore, and the US.

Experience Level

Senior-level. The posting specifies 7+ years of experience in process-related semiconductor roles.

Responsibilities

Accountable for strategic and tactical leadership of process integration workstreams, team performance, and stakeholder communications to achieve yield, quality, and schedule objectives.

• Drive best-in-class yield ramp and product maturity for HBM across fabs.
• Define and implement process integration tools, systems, methodologies, and roadmaps to meet business objectives.
• Provide direct leadership on critical deliverables, remove barriers, and allocate resources to meet commitments.
• Conduct metrics and program reviews; ensure subordinate managers perform effective reviews within their teams.
• Establish clear performance goals, job profiles, and development plans; manage performance and succession planning.
• Communicate regularly and transparently with team and external partners; build external relationships to adopt industry best practices.
• Develop and maintain training roadmaps to build leading-edge skills and avoid single-point skill risks.
• Integrate AI-assisted tools and insights responsibly to improve efficiency, quality, and effectiveness.
• Travel to Micron sites as required to support collaboration (typical frequency 20–50%).

Requirements

Key qualifications and skills required to perform the role.

• Minimum 7+ years in semiconductor process-related roles with demonstrated ownership and problem-solving ability.
• Deep understanding of semiconductor fabrication process flows, process interactions, and their impact on yield, device performance, and reliability.
• Familiarity with DRAM and NAND device operation and structure to interpret parametric, probe, and qualification data across front-end and back-end processes.
• Proven track record resolving structure- and device-related issues and performing root-cause analysis.
• Strong data-driven decision making, model-based problem solving, and presentation skills.
• Excellent organizational, multi-tasking, verbal, and written communication skills; strong interpersonal and cross-cultural collaboration experience.
• Ability to be flexible with responsibilities, take initiative, and work effectively in multinational environments.
• Role-appropriate digital fluency and AI literacy to use AI-enabled tools responsibly for research, analysis, and operational tasks.
• Willingness to travel as needed to support department goals (20–50%).

Education Requirements

Bachelor's, Master's, or PhD in Electrical Engineering, Materials Engineering, Materials Science, Physics, or Chemical Engineering.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.