Principal Engineer – Process Development, Wet, NAND

Job Title

Principal Engineer – Process Development, Wet, NAND

Role Summary

Lead wet-process development projects for NAND memory technology at Fab 10N/X in Singapore. Provide technical leadership for experiment design, process integration, transfer readiness and roadmap definition to support NAND scaling.

Work cross-functionally to enable robust process windows, yield improvement, and manufacturing transfer; mentor engineers and strengthen SOP/documentation governance.

Experience Level

Senior-level (Principal Engineer).

Responsibilities

Accountable for wet-process development, integration to manufacturing, and technical leadership across projects and stakeholders.

• Lead project-level wet process development initiatives for NAND technology.
• Design and execute complex experiments and DOE/SPC to establish robust process windows and drive yield improvements.
• Provide integration support and enable transfer readiness from R&D to manufacturing; support ramp-up and corrective actions.
• Engage suppliers and stakeholders to mature process capability (vapor etch, wet strip, dry strip, selective chemical etching).
• Maintain accurate records, prepare technical reports, and contribute to SOPs and knowledge-management systems; ensure safety, quality, and IP compliance.
• Mentor senior engineers, represent the function in technical forums, and benchmark against industry standards.
• Identify emerging trends, risks, and opportunities; recommend investments and critical initiatives.
• Integrate AI-assisted tools and insights to improve efficiency, quality, and effectiveness where appropriate.

Requirements

Core technical and interpersonal skills required to perform the role.

• Demonstrated experience in wet-process research & development for semiconductor technology.
• Deep understanding of process technologies such as vapor etch, wet strip, dry strip, and selective chemical etching.
• Familiarity with electrical evaluation methods and fab metrology tools (e.g., CD-SEM, thickness measurement, particle counters).
• Proficiency with DOE/SPC and data analysis systems (example: Y3) to analyze experimental outcomes.
• Working knowledge of memory process flow in both planar and vertical NAND contexts.
• Strong cross-functional collaboration, concise written and verbal communication, and the ability to prioritize in a dynamic environment.
• Experience preparing technical reports and contributing to SOPs; focus on safety, quality, and IP protection.

Education Requirements

PhD with ≥5 years, or Master’s with ≥7 years, or Bachelor’s with ≥10 years of relevant experience in Electrical Engineering, Materials Science, Chemical Engineering, Physics, or a related field.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.