Principal Engineer - Compact Device Model Engineer
Develop and extract compact device models for semiconductor devices (MOSFET, HV FET/LDMOS, diodes, varactors, resistors) across SOI, Bulk and GaN technologies. Define test structures and oversee electrical characterization (DC, CV, IV, S-parameters, noise, mismatch) to produce physics-based compact models.
Work within a device modelling team and with global teams to investigate data/model discrepancies and to integrate back-end device characterization (inductors, capacitors, transmission lines, EM simulations) into models.
Senior β candidates with an M.S./M.Tech plus ~2 years' relevant experience or candidates holding a PhD in a relevant field.
Primary technical responsibilities and team interactions:
Must-have technical and professional qualifications (education details are listed separately under Education Requirements):
PhD in Electrical Engineering with specialization in Microelectronics or semiconductor devices; alternatively M.S./M.Tech (Electrical Engineering, Microelectronics or related) β the posting also indicates M.S./M.Tech candidates with about 2 years of experience are acceptable. No certifications specified.
Company: GlobalFoundries
Headquarters: Saratoga Springs, New York, USA
GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.
