Principal Engineer, Advanced DRAM PI
Lead an R&D engineering group focused on performance, reliability, and manufacturability of next-generation 3D DRAM charge storage devices and thin-film transistors. The role combines device physics, materials science, and process integration to resolve scaling, performance, and power challenges in a production-relevant R&D fab.
Work with cross-functional teams (build, probe, yield) to design experiments, analyze data, and implement process and equipment changes that improve product quality and manufacturability.
Senior β Principal-level role. Minimum industry experience: 5+ years (per posting).
Primary responsibilities include leading technology development and a team to deliver manufacturable DRAM technologies.
Must-have technical experience and skills.
Nice-to-have:
MS or PhD in Physics, Materials Science, Electrical Engineering, or a related technical field (as stated in the posting).
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
