Principal Device Engineer

Job Title

Principal Device Engineer

Role Summary

As a Principal Device Engineer in Advanced Devices (TCAD) within BGMOS at Nexperia Manchester, you will lead TCAD-driven development and optimisation of Power Trench MOSFET technologies. You will apply device physics and simulation to shape device concepts, influence early-stage decisions and support transfer to industrialisation.

Experience Level

Senior — several years of experience in device engineering and TCAD-based technology development; experience with power MOSFETs preferred.

Responsibilities

Lead TCAD simulation, concept evaluation and cross-functional technical guidance from concept through to production.

• Develop and optimise Power Trench MOSFET architectures using advanced TCAD simulation.
• Perform electrostatic, thermal and reliability-relevant simulations to guide device design and requirements.
• Design and refine cell structures, termination schemes and next-generation device concepts.
• Provide quantitative trade-off and feasibility analyses to support technology roadmaps.
• Translate simulation insights into process, layout and structural requirements; support DOE, calibration and silicon learning.
• Troubleshoot device-level issues and support development and production teams.
• Collaborate with Process Integration, Product Development, Design, Manufacturing and foundry partners.
• Contribute to intellectual property generation and early-stage concept definition.

Requirements

Essential and desirable skills for the role.

• Must-have: Several years’ experience in device engineering and TCAD-based technology development.
• Must-have: Strong understanding of semiconductor device physics.
• Must-have: Deep expertise with TCAD tools (e.g. Synopsys Sentaurus).
• Must-have: Experience with Power MOSFET device concepts, ideally trench-based.
• Must-have: Ability to analyse performance, reliability and manufacturability trade-offs.
• Must-have: Strong analytical problem-solving and clear, structured technical communication skills.
• Must-have: Ability to travel occasionally as required.
• Nice-to-have: Industrial or foundry experience in Power MOSFET technology; process integration or layout-driven optimisation; knowledge of high-field effects, ruggedness (UIS) and reliability mechanisms; understanding of foundry developments and process transfers; proactive, innovative mindset.

Education Requirements

MSc or PhD in Electrical Engineering, Physics or a related technical field; PhD preferred for power semiconductor device research.

About the Company

Company: Nexperia

Headquarters: Cabuyao, Philippines

Nexperia is a global leader in semiconductor development with a focus on in-house production. The company boasts a strong international network and is dedicated to innovation and excellence in the semiconductor industry, providing a dynamic environment for its employees.